IRF7103PBF

Teknik Özellikler

Terminal Kaplaması

Matte Tin (Sn)

Jesd30 Code

R-PDSO-G8

Yayın Yılı

1997

RoHS Durumu

ROHS3 Compliant

Drain To Source Voltage Vdss

50V

Operating Mode

ENHANCEMENT MODE

Number Of Elements

2

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Drainsource On Resistancemax

0.13Ohm

Gate Charge Qg Max Vgs

30nC @ 10V

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Rds On Max Id Vgs

130m Ω @ 3A, 10V

Fabrika Tedarik Süresi

12 Weeks

Jedec95 Code

MS-012AA

Seri

HEXFET®

Input Capacitance Ciss Max Vds

290pF @ 25V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

30

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Ambalaj

Tube

Yüzey Montaj

YES

Pulsed Drain Currentmax Idm

10A

Montaj Tipi

Surface Mount

JESD-609 Kodu

e3

Tepe Reflow Sıcaklığı (°C)

260

Qualification Status

Not Qualified

Vgsth Max Id

3V @ 250μA

Temel Parça No

IRF7103PBF

Terminal Formu

GULL WING

Power Dissipationmax Abs

2W

Fet Type

2 N-Channel (Dual)

Parça Durumu

Discontinued

Fet Feature

Standard

Drain Currentmax Abs Id

3A

Power Max

2W

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Application

SWITCHING

Terminal Sayısı

8