IRF6723M2DTRPBF

Teknik Özellikler

Drain Currentmax Abs Id

47A

Genişlik

5.05mm

Continuous Drain Current Id

15A

Yayın Yılı

2009

Terminal Kaplaması

TIN SILVER COPPER

Case Connection

DRAIN

Fall Time Typ

20 ns

Turn Off Delay Time

15 ns

Fet Type

2 N-Channel (Dual)

Tepe Reflow Sıcaklığı (°C)

260

Rds On Max Id Vgs

6.6m Ω @ 15A, 10V

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Jesd30 Code

R-XBCC-N4

Uzunluk

6.35mm

Input Capacitance Ciss Max Vds

1380pF @ 15V

Terminal Sayısı

4

Transistor Element Material

SILICON

Max Power Dissipation

2.7W

JESD-609 Kodu

e1

Çalışma Sıcaklığı

-55°C~175°C TJ

Number Of Elements

2

Gate Charge Qg Max Vgs

14nC @ 4.5V

Kılıf / Paket

DirectFET™ Isometric MA

Turn On Delay Time

14 ns

Gate To Source Voltage Vgs

20V

Element Configuration

Dual

Drain To Source Voltage Vdss

30V

Operating Mode

ENHANCEMENT MODE

Yükseklik

596μm

Drainsource On Resistancemax

0.0066Ohm

Rise Time

41ns

Fet Feature

Logic Level Gate

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Radyasyon Dayanımı

No

Parça Durumu

Obsolete

RoHS Durumu

RoHS Compliant

Seri

HEXFET®

Drain To Source Breakdown Voltage

30V