IRF5852TRPBF

Teknik Özellikler

Max Power Dissipation

960mW

Seri

HEXFET®

Terminal

SMD/SMT

Drain To Source Breakdown Voltage

20V

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Dissipation

960mW

Ambalaj

Tape & Reel (TR)

Dual Supply Voltage

20V

Vgsth Max Id

1.25V @ 250μA

Temel Parça No

IRF5852PBF

Montaj

Surface Mount

Rds On Max

90 mΩ

Montaj Tipi

Surface Mount

Pin Sayısı

6

Current Continuous Drain Id25

2.7A

Number Of Elements

2

Nem Hassasiyeti (MSL)

2 (1 Year)

Rise Time

1.2ns

Radyasyon Dayanımı

No

Uzunluk

3mm

Fet Feature

Logic Level Gate

Input Capacitance Ciss Max Vds

400pF @ 15V

Threshold Voltage

1.25V

Nominal Vgs

1.25 V

Parça Durumu

Obsolete

RoHS Durumu

RoHS Compliant

Kurşunsuz

Lead Free

Reach Svhc

No SVHC

Power Max

960mW

Element Configuration

Dual

Fet Type

2 N-Channel (Dual)

Turn Off Delay Time

15 ns

Drain To Source Voltage Vdss

20V

Drain To Source Resistance

90mOhm

Yükseklik

900μm

Input Capacitance

400pF

Rds On Max Id Vgs

90mOhm @ 2.7A, 4.5V

Gate Charge Qg Max Vgs

6nC @ 4.5V

Min. Çalışma Sıcaklığı

-55°C

Turn On Delay Time

6.6 ns