IRF5852

Teknik Özellikler

Drain To Source Voltage Vdss

20V

Ambalaj

Tube

Seri

HEXFET®

Power Max

960mW

Fet Type

2 N-Channel (Dual)

Current Continuous Drain Id25

2.7A

Montaj Tipi

Surface Mount

Rds On Max Id Vgs

90mOhm @ 2.7A, 4.5V

Vgsth Max Id

1.25V @ 250μA

Akım Değeri

2.7A

Voltage Rated Dc

20V

Fet Feature

Logic Level Gate

Kılıf / Paket

SOT-23-6 Thin, TSOT-23-6

Tedarikçi Cihaz Paketi

6-TSOP

Gate Charge Qg Max Vgs

6nC @ 4.5V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rise Time

1.2ns

Parça Durumu

Obsolete

Kurşunsuz

Contains Lead

RoHS Durumu

Non-RoHS Compliant

Input Capacitance Ciss Max Vds

400pF @ 15V

Continuous Drain Current Id

2.7A

Yayın Yılı

2003