IPG20N06S4L26ATMA1

Teknik Özellikler

JESD-609 Kodu

e3

Fet Type

2 N-Channel (Dual)

Halogen Free

Halogen Free

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Terminal Sayısı

8

Seri

OptiMOS™

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

2.2V @ 10μA

Gate Charge Qg Max Vgs

20nC @ 10V

Input Capacitance Ciss Max Vds

1430pF @ 25V

Drainsource On Resistancemax

0.026Ohm

Ambalaj

Cut Tape (CT)

Power Max

33W

Operating Mode

ENHANCEMENT MODE

Rise Time

1.5ns

Fabrika Tedarik Süresi

12 Weeks

Fall Time Typ

10 ns

Montaj Tipi

Surface Mount

Rds On Max Id Vgs

26m Ω @ 17A, 10V

REACH Uyumluluk Kodu

not_compliant

Continuous Drain Current Id

20A

Kurşunsuz

Contains Lead

Terminal Formu

FLAT

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Parça Durumu

Active

Avalanche Energy Rating Eas

35 mJ

Fet Feature

Logic Level Gate

Number Of Elements

2

Yayın Yılı

2010

Turn Off Delay Time

18 ns

Gate To Source Voltage Vgs

16V

Pin Sayısı

8

RoHS Durumu

ROHS3 Compliant

Reference Standard

AEC-Q101

Turn On Delay Time

5 ns

Çalışma Sıcaklığı

-55°C~175°C TJ

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Terminal Kaplaması

Tin (Sn)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED