IPG20N06S4L14ATMA2

Teknik Özellikler

Drainsource On Resistancemax

0.0137Ohm

Gate Charge Qg Max Vgs

39nC @ 10V

Input Capacitance Ciss Max Vds

2890pF @ 25V

Number Of Channels

2

Yükseklik

1mm

Montaj Tipi

Surface Mount

Fall Time Typ

15 ns

Rds On Max Id Vgs

13.7m Ω @ 17A, 10V

Ambalaj

Tape & Reel (TR)

Fabrika Tedarik Süresi

12 Weeks

Rise Time

2ns

Operating Mode

ENHANCEMENT MODE

Terminal Formu

FLAT

REACH Uyumluluk Kodu

not_compliant

Continuous Drain Current Id

20A

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Genişlik

6.15mm

Parça Durumu

Active

Additional Feature

LOGIC LEVEL COMPATIBLE

Kurşunsuz Kodu

yes

Halogen Free

Halogen Free

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Fet Type

2 N-Channel (Dual)

Terminal Sayısı

8

Vgsth Max Id

2.2V @ 20μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

Automotive, AEC-Q101, OptiMOS™

Turn On Delay Time

8 ns

Çalışma Sıcaklığı

-55°C~175°C TJ

Max Junction Temperature Tj

175°C

Power Dissipation

50W

Max Dual Supply Voltage

60V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Max Power Dissipation

50W

Kılıf / Paket

8-PowerVDFN

Uzunluk

5.15mm

Montaj

Surface Mount

Avalanche Energy Rating Eas

90 mJ

Number Of Elements

2