IPG20N06S4L14ATMA1

Teknik Özellikler

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

Automotive, AEC-Q101, OptiMOS™

Drain To Source Voltage Vdss

60V

Vgsth Max Id

2.2V @ 20μA

Terminal Sayısı

8

Fet Type

2 N-Channel (Dual)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Additional Feature

LOGIC LEVEL COMPATIBLE

Other Names

SP000705540

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Parça Durumu

Discontinued

Continuous Drain Current Id

20A

Terminal Formu

FLAT

Tedarikçi Cihaz Paketi

PG-TDSON-8-4

Ambalaj

Tape & Reel (TR)

Power Max

50W

Rise Time

2ns

Operating Mode

ENHANCEMENT MODE

Fall Time Typ

15 ns

Montaj Tipi

Surface Mount

Rds On Max Id Vgs

13.7m Ω @ 17A, 10V

Gate Charge Qg Max Vgs

39nC @ 10V

Input Capacitance Ciss Max Vds

2890pF @ 25V

Drainsource On Resistancemax

0.0137Ohm

RoHS Durumu

ROHS3 Compliant

Turn Off Delay Time

40 ns

Yayın Yılı

2010

Pin Sayısı

8

Gate To Source Voltage Vgs

16V

Fet Feature

Logic Level Gate

Number Of Elements

2

Avalanche Energy Rating Eas

90 mJ

ECCN Kodu

EAR99

Montaj

Surface Mount

Max Power Dissipation

50W

Current Continuous Drain Id25

20A

Kılıf / Paket

8-PowerVDFN

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Max Dual Supply Voltage

60V