IPG20N06S415ATMA2

Teknik Özellikler

Kılıf / Paket

8-PowerVDFN

Max Power Dissipation

50W

Montaj

Surface Mount

Uzunluk

5.15mm

Max Dual Supply Voltage

60V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Turn On Delay Time

12 ns

Çalışma Sıcaklığı

-55°C~175°C TJ

Power Dissipation

50W

Element Configuration

Dual

Drain To Source Breakdown Voltage

60V

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

8

Gate To Source Voltage Vgs

20V

Turn Off Delay Time

17 ns

Yayın Yılı

2005

Number Of Elements

2

Fet Feature

Standard

Avalanche Energy Rating Eas

90 mJ

Parça Durumu

Active

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Genişlik

6.15mm

Terminal Formu

FLAT

Continuous Drain Current Id

20A

REACH Uyumluluk Kodu

not_compliant

Rds On Max Id Vgs

15.5m Ω @ 17A, 10V

Montaj Tipi

Surface Mount

Fall Time Typ

9 ns

Fabrika Tedarik Süresi

12 Weeks

Rise Time

2ns

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tape & Reel (TR)

Drainsource On Resistancemax

0.0155Ohm

Input Capacitance Ciss Max Vds

2260pF @ 25V

Yükseklik

1mm

Gate Charge Qg Max Vgs

29nC @ 10V

Vgsth Max Id

4V @ 20μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

Automotive, AEC-Q101, OptiMOS™