IPG20N06S415ATMA1

Teknik Özellikler

Ambalaj

Tape & Reel (TR)

Power Max

50W

Operating Mode

ENHANCEMENT MODE

Rise Time

2ns

Montaj Tipi

Surface Mount

Fall Time Typ

9 ns

Rds On Max Id Vgs

15.5m Ω @ 17A, 10V

Gate Charge Qg Max Vgs

29nC @ 10V

Input Capacitance Ciss Max Vds

2260pF @ 25V

Drainsource On Resistancemax

0.0155Ohm

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Parça Durumu

Discontinued

Continuous Drain Current Id

20A

Terminal Formu

FLAT

Fet Type

2 N-Channel (Dual)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Seri

Automotive, AEC-Q101, OptiMOS™

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

4V @ 20μA

Terminal Sayısı

8

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Turn On Delay Time

12 ns

Çalışma Sıcaklığı

-55°C~175°C TJ

ECCN Kodu

EAR99

Montaj

Surface Mount

Max Power Dissipation

50W

Kılıf / Paket

8-PowerVDFN

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Max Dual Supply Voltage

60V

Fet Feature

Standard

Number Of Elements

2

Avalanche Energy Rating Eas

90 mJ

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2010

Turn Off Delay Time

17 ns

Gate To Source Voltage Vgs

20V

Pin Sayısı

8