IPG20N06S415AATMA1

Teknik Özellikler

Drain To Source Voltage Vdss

60V

Vgsth Max Id

4V @ 20μA

Seri

Automotive, AEC-Q101, OptiMOS™

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Sayısı

8

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Halogen Free

Halogen Free

Fet Type

2 N-Channel (Dual)

Kurşunsuz Kodu

yes

Parça Durumu

Active

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Formu

FLAT

Kurşunsuz

Contains Lead

Continuous Drain Current Id

20A

REACH Uyumluluk Kodu

not_compliant

Rds On Max Id Vgs

15.5m Ω @ 17A, 10V

Montaj Tipi

Surface Mount, Wettable Flank

Fabrika Tedarik Süresi

12 Weeks

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tape & Reel (TR)

Drainsource On Resistancemax

0.0155Ohm

Input Capacitance Ciss Max Vds

2260pF @ 25V

Gate Charge Qg Max Vgs

29nC @ 10V

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

8

Yayın Yılı

2015

Number Of Elements

2

Fet Feature

Standard

Avalanche Energy Rating Eas

90 mJ

Kılıf / Paket

8-PowerVDFN

Max Power Dissipation

50W

Montaj

Surface Mount

Max Dual Supply Voltage

60V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Çalışma Sıcaklığı

-55°C~175°C TJ