IPG20N06S3L-35

Teknik Özellikler

Qualification Status

Not Qualified

Terminal Kaplaması

MATTE TIN

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Case Connection

DRAIN

Çalışma Sıcaklığı

-55°C~175°C TJ

Kılıf / Paket

8-PowerVDFN

Max Power Dissipation

30W

Montaj

Surface Mount

ECCN Kodu

EAR99

Ds Breakdown Voltagemin

55V

Tepe Reflow Sıcaklığı (°C)

260

Number Of Elements

2

Fet Feature

Logic Level Gate

Pin Sayısı

8

Avalanche Energy Rating Eas

55 mJ

Jesd30 Code

R-PDSO-F6

RoHS Durumu

RoHS Compliant

Pin Sayısı

8

Yayın Yılı

2008

Rds On Max Id Vgs

35m Ω @ 11A, 10V

Montaj Tipi

Surface Mount

Operating Mode

ENHANCEMENT MODE

Power Max

30W

Ambalaj

Tape & Reel (TR)

Drainsource On Resistancemax

0.035Ohm

Input Capacitance Ciss Max Vds

1730pF @ 25V

Gate Charge Qg Max Vgs

23nC @ 10V

Parça Durumu

Obsolete

Tepe Reflow Süresi (maks. sn)

40

Transistor Element Material

SILICON

Temel Parça No

*PG20N06

Terminal Formu

FLAT

Continuous Drain Current Id

20A

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Fet Type

2 N-Channel (Dual)

Additional Feature

LOGIC LEVEL COMPATIBLE

JESD-609 Kodu

e3

Vgsth Max Id

2.2V @ 15μA

Drain To Source Voltage Vdss

55V

Nem Hassasiyeti (MSL)

1 (Unlimited)