IPG20N06S3L-23

Teknik Özellikler

JESD-609 Kodu

e3

Additional Feature

LOGIC LEVEL COMPATIBLE

Fet Type

2 N-Channel (Dual)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Terminal Sayısı

6

Seri

OptiMOS™

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

2.2V @ 20μA

Drain To Source Voltage Vdss

55V

Drain Currentmax Abs Id

33A

Gate Charge Qg Max Vgs

42nC @ 10V

Input Capacitance Ciss Max Vds

2950pF @ 25V

Drainsource On Resistancemax

0.023Ohm

Ambalaj

Tape & Reel (TR)

Rise Time

35ns

Operating Mode

ENHANCEMENT MODE

Montaj Tipi

Surface Mount

Fall Time Typ

75 ns

Rds On Max Id Vgs

23m Ω @ 16A, 10V

Continuous Drain Current Id

20A

Terminal Formu

FLAT

Temel Parça No

*PG20N06

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

40

Parça Durumu

Obsolete

Avalanche Energy Rating Eas

110 mJ

Pin Sayısı

8

Fet Feature

Logic Level Gate

Number Of Elements

2

Turn Off Delay Time

40 ns

Yayın Yılı

2008

Pin Sayısı

8

Gate To Source Voltage Vgs

16V

RoHS Durumu

RoHS Compliant

Drain To Source Breakdown Voltage

55V

Element Configuration

Dual

Jesd30 Code

R-PDSO-F6

Power Dissipation

45W

Çalışma Sıcaklığı

-55°C~175°C TJ

Case Connection

DRAIN