IPG20N06S2L35ATMA1

Teknik Özellikler

Kılıf / Paket

8-PowerVDFN

Current Continuous Drain Id25

20A

Ds Breakdown Voltagemin

55V

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Yüzey Montaj

YES

Çalışma Sıcaklığı

-55°C~175°C TJ

Jesd30 Code

R-PDSO-F

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2009

Number Of Elements

2

Fet Feature

Logic Level Gate

Avalanche Energy Rating Eas

100 mJ

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Parça Durumu

Active

Terminal Formu

FLAT

Temel Parça No

*PG20N06

Montaj Tipi

Surface Mount

Rds On Max Id Vgs

35m Ω @ 15A, 10V

Ambalaj

Tape & Reel (TR)

Power Max

65W

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

10 Weeks

Drainsource On Resistancemax

0.035Ohm

Gate Charge Qg Max Vgs

23nC @ 10V

Input Capacitance Ciss Max Vds

790pF @ 25V

Vgsth Max Id

2V @ 27μA

Drain To Source Voltage Vdss

55V

Drain Currentmax Abs Id

20A

Pulsed Drain Currentmax Idm

80A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

Automotive, AEC-Q101, OptiMOS™

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Fet Type

2 N-Channel (Dual)