IPG20N04S4L08AATMA1

Teknik Özellikler

Terminal Formu

FLAT

Kurşunsuz

Contains Lead

Continuous Drain Current Id

20A

REACH Uyumluluk Kodu

not_compliant

Parça Durumu

Active

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

3050pF @ 25V

Gate Charge Qg Max Vgs

39nC @ 10V

Rds On Max Id Vgs

8.2m Ω @ 17A, 10V

Montaj Tipi

Surface Mount, Wettable Flank

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

12 Weeks

Ambalaj

Tape & Reel (TR)

Terminal Sayısı

8

Vgsth Max Id

2.2V @ 22μA

Drain To Source Voltage Vdss

40V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

Automotive, AEC-Q101, OptiMOS™

Additional Feature

LOGIC LEVEL COMPATIBLE

Kurşunsuz Kodu

yes

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Halogen Free

Halogen Free

Fet Type

2 N-Channel (Dual)

Max Dual Supply Voltage

40V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kılıf / Paket

8-PowerVDFN

Max Power Dissipation

54W

Montaj

Surface Mount

Çalışma Sıcaklığı

-55°C~175°C TJ

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Pin Sayısı

8

Yayın Yılı

2015

RoHS Durumu

ROHS3 Compliant

Avalanche Energy Rating Eas

145 mJ

Number Of Elements

2

Fet Feature

Logic Level Gate