IPG20N04S4L07ATMA1

Teknik Özellikler

Seri

Automotive, AEC-Q101, OptiMOS™

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

2.2V @ 30μA

Terminal Sayısı

8

Fet Type

2 N-Channel (Dual)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Halogen Free

Halogen Free

JESD-609 Kodu

e3

Additional Feature

LOGIC LEVEL COMPATIBLE

Parça Durumu

Active

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Kurşunsuz

Contains Lead

Continuous Drain Current Id

20A

REACH Uyumluluk Kodu

not_compliant

Terminal Formu

FLAT

Fabrika Tedarik Süresi

12 Weeks

Rise Time

4ns

Operating Mode

ENHANCEMENT MODE

Power Max

65W

Ambalaj

Tape & Reel (TR)

Rds On Max Id Vgs

7.2m Ω @ 17A, 10V

Montaj Tipi

Surface Mount

Fall Time Typ

25 ns

Input Capacitance Ciss Max Vds

3980pF @ 25V

Gate Charge Qg Max Vgs

50nC @ 10V

Drainsource On Resistancemax

0.0072Ohm

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2010

Turn Off Delay Time

50 ns

Pin Sayısı

8

Gate To Source Voltage Vgs

16V

Fet Feature

Logic Level Gate

Number Of Elements

2

Avalanche Energy Rating Eas

230 mJ

ECCN Kodu

EAR99

Montaj

Surface Mount

Kılıf / Paket

8-PowerVDFN

Max Power Dissipation

65W

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED