IPG16N10S461ATMA1

Teknik Özellikler

Turn Off Delay Time

5 ns

Yayın Yılı

2011

Gate To Source Voltage Vgs

20V

Pin Sayısı

8

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PDSO-F6

Avalanche Energy Rating Eas

33 mJ

Pin Sayısı

8

Fet Feature

Standard

Number Of Elements

2

Max Dual Supply Voltage

100V

Montaj

Surface Mount

ECCN Kodu

EAR99

Max Power Dissipation

29W

Kılıf / Paket

8-PowerVDFN

Çalışma Sıcaklığı

-55°C~175°C TJ

Turn On Delay Time

3 ns

Case Connection

DRAIN

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Terminal Kaplaması

Tin (Sn)

Feedback Capmax Crss

20 pF

Terminal Sayısı

6

Pulsed Drain Currentmax Idm

64A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

Automotive, AEC-Q101, OptiMOS™

Vgsth Max Id

3.5V @ 9μA

JESD-609 Kodu

e3

Fet Type

2 N-Channel (Dual)

Halogen Free

Halogen Free

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current Id

16A

REACH Uyumluluk Kodu

not_compliant

Kurşunsuz

Contains Lead

Terminal Formu

FLAT

Transistor Element Material

SILICON

Parça Durumu

Active

Gate Charge Qg Max Vgs

7nC @ 10V

Input Capacitance Ciss Max Vds

490pF @ 25V

Drainsource On Resistancemax

0.061Ohm

Ambalaj

Tape & Reel (TR)