IPG15N06S3L-45

Teknik Özellikler

Avalanche Energy Rating Eas

47 mJ

Fet Feature

Logic Level Gate

Pin Sayısı

8

Number Of Elements

2

Yayın Yılı

2008

Pin Sayısı

8

RoHS Durumu

RoHS Compliant

Jesd30 Code

R-PDSO-F6

Çalışma Sıcaklığı

-55°C~175°C TJ

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Case Connection

DRAIN

Qualification Status

Not Qualified

Terminal Kaplaması

MATTE TIN

Tepe Reflow Sıcaklığı (°C)

260

ECCN Kodu

EAR99

Montaj

Surface Mount

Ds Breakdown Voltagemin

55V

Kılıf / Paket

8-PowerVDFN

Max Power Dissipation

21W

JESD-609 Kodu

e3

Additional Feature

LOGIC LEVEL COMPATIBLE

Fet Type

2 N-Channel (Dual)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Terminal Sayısı

6

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

OptiMOS™

Pulsed Drain Currentmax Idm

60A

Drain Currentmax Abs Id

17A

Drain To Source Voltage Vdss

55V

Vgsth Max Id

2.2V @ 10μA

Input Capacitance Ciss Max Vds

1420pF @ 25V

Gate Charge Qg Max Vgs

20nC @ 10V

Drainsource On Resistancemax

0.045Ohm

Power Max

21W

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tape & Reel (TR)

Rds On Max Id Vgs

45m Ω @ 10A, 10V

Montaj Tipi

Surface Mount

Continuous Drain Current Id

15A

Terminal Formu

FLAT