Adet bazlı fiyat
- 1+ adet$1.99
- 10+ adet$1.87
- 100+ adet$1.77
- 500+ adet$1.67
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Configuration
- Single
- Ürün Durumu
- Active
- Part Aliases
- IKWH20N65WR6 SP005545963
- Maximum Gate Emitter Voltage
- ±20V
- Power Max
- 136 W
- Collectoremitter Saturation Voltage
- 1.35V
- Channel Type
- N
- Currentcollector Ic Max
- 55 A
- Tedarikçi Cihaz Paketi
- PG-TO247-3-32
- Voltage Collector Emitter Breakdown Max
- 650 V
- Pd Power Dissipation
- 136 W
- Collector Emitter Voltage Vceo Max
- 650 V
- Giriş Tipi
- Standard
- Minimum Operating Temperature
- - 40 C
- Igbt Type
- Trench Field Stop
- Temel Ürün No
- IKWH20N
- Fabrika Paket Adedi
- 240
- Continuous Collector Current
- 40A
- Montaj Stili
- Through Hole
- Package Type
- TO-247-3-HCC
- RoHS
- Details
- Kılıf / Paket
- TO-247-3
- Maximum Collector Emitter Voltage
- 650 V
- Continuous Collector Current At25 C
- 55 A
- Technology
- Si
- Ambalaj
- Tube
- Current Collector Pulsed Icm
- 60 A
- Gate Charge
- 97 nC
- Power Dissipation
- 140W
- Paket
- Tube
- Çalışma Sıcaklığı
- -40°C ~ 175°C (TJ)
- Ürün Tipi
- IGBT Transistors
- Continuous Collector Current Ic Max
- 20 A
- Pin Sayısı
- 3
- Maks. Çalışma Sıcaklığı
- + 175 C
- Montaj Tipi
- Through Hole
- Vceon Max Vge Ic
- 1.7V @ 15V, 20A
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