IGW25N120H3XK

Teknik Özellikler

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Üretici Parça No

IGW25N120H3XK

Collectoremitter Saturation Voltage

2.05 V

Operating Temperaturemax

175 °C

Turnoff Timenom Toff

397 ns

Turnon Timenom Ton

61 ns

Pd Power Dissipation

326 W

Collector Emitter Voltage Vceo Max

1.2 kV

Configuration

Single

Gateemitter Leakage Current

600 nA

Jedec95 Code

TO-247

Maximum Gate Emitter Voltage

- 20 V, + 20 V

Tradename

TRENCHSTOP

Birim Ağırlık

0.211644 oz

Collectoremitter Voltagemax

1200 V

Risk Rank

2.13

RoHS

Details

Transistor Element Material

SILICON

Yüzey Montaj

NO

Part Aliases

SP000674424 IGW25N120H3 IGW25N120H3FKSA1

Continuous Collector Current At25 C

50 A

REACH Uyumluluk Kodu

compliant

Jesd30 Code

R-PSFM-T3

Number Of Elements

1

Ambalaj

Tube

Terminal Pozisyonu

SINGLE

Seri

HighSpeed 3

Fabrika Paket Adedi

240

Package Style

FLANGE MOUNT

Montaj Stili

Through Hole

Number Of Terminals

3

Kılıf / Paket

TO-247-3

Package Description

FLANGE MOUNT, R-PSFM-T3

Part Life Cycle Code

Active

Terminal Formu

THROUGH-HOLE

Maks. Çalışma Sıcaklığı

+ 175 C

Package Body Material

PLASTIC/EPOXY

Minimum Operating Temperature

- 40 C

Transistor Application

POWER CONTROL

Collector Currentmax Ic

50 A