IGLT65R035D2ATMA1

Teknik Özellikler

Kılıf / Paket

PG-HDSOP-16

Montaj Stili

SMD/SMT

Transistor Polarity

N-Channel

Vgs Th Gatesource Threshold Voltage

1.6 V

Vds Drainsource Breakdown Voltage

650 V

Maks. Çalışma Sıcaklığı

+ 150 C

Output Power

152 W

Qg Gate Charge

11 nC

Transistor Type

1 N-Channel

Minimum Operating Temperature

- 55 C

Configuration

Single

Channel Mode

Enhancement

Rds On Drainsource Resistance

42 mOhms

Tip

GaN Transistor

Number Of Channels

1 Channel

Vgs Gatesource Voltage

- 10 V