IDW32G65C5BXKSA2

Teknik Özellikler

Terminal Kaplaması

Tin (Sn)

ECCN Kodu

EAR99

Number Of Phases

1

Current Reverse Leakage Vr

200μA @ 650V

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-247-3

Reverse Recovery Time

0ns

Voltage Forward Vf Max If

1.7V @ 16A

JESD-609 Kodu

e3

Jesd30 Code

R-PSFM-T3

Kurşunsuz Kodu

yes

Capacitance Vr F

470pF @ 1V 1MHz

Reverse Currentmax

200μA

Speed

No Recovery Time > 500mA (Io)

Seri

CoolSiC™+

Voltage Dc Reverse Vr Max

650V

Yüzey Montaj

NO

Operating Temperature Max

175°C

Applications

EFFICIENCY

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Power Dissipation Max

188W

Current Average Rectified Io

16A DC

Terminal Sayısı

3

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Configuration

COMMON CATHODE, 2 ELEMENTS

Diode Type

Silicon Carbide Schottky

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Through Hole

Operating Temperature Junction

-55°C~175°C

Fabrika Tedarik Süresi

18 Weeks

Case Connection

CATHODE

Additional Feature

PD-CASE

Nonrep Pk Forward Currentmax

74A

Terminal Pozisyonu

SINGLE

Parça Durumu

Active

Ambalaj

Tube

Rep Pk Reverse Voltagemax

650V

Number Of Elements

2