IDW12G65C5XKSA1

Teknik Özellikler

Speed

No Recovery Time > 500mA (Io)

Seri

CoolSiC™+

Applications

EFFICIENCY

Peak Reverse Current

190μA

Reverse Recovery Time

0ns

JESD-609 Kodu

e3

Voltage Forward Vf Max If

1.7V @ 12A

Kılıf / Paket

TO-247-3

HTS Kodu

8541.10.00.80

Capacitance Vr F

360pF @ 1V 1MHz

Kurşunsuz Kodu

yes

Current Reverse Leakage Vr

190μA @ 650V

Maks. Çalışma Sıcaklığı

175°C

Max Repetitive Reverse Voltage Vrrm

650V

RoHS Durumu

ROHS3 Compliant

Terminal Kaplaması

Tin (Sn)

Pin Sayısı

3

ECCN Kodu

EAR99

Number Of Phases

1

Min. Çalışma Sıcaklığı

-55°C

Ambalaj

Tube

Parça Durumu

Active

Max Surge Current

71A

Kurşunsuz

Lead Free

Number Of Elements

1

Max Power Dissipation

76W

Fabrika Tedarik Süresi

18 Weeks

Operating Temperature Junction

-55°C~175°C

Forward Current

12A

Peak Nonrepetitive Surge Current

71A

Case Connection

CATHODE

Additional Feature

HIGH RELIABILITY

Element Configuration

Single

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Through Hole

Diode Type

Silicon Carbide Schottky

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Current Average Rectified Io

12A DC

Terminal Sayısı

3

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED