IDW10G65C5XKSA1

Teknik Özellikler

RoHS Durumu

ROHS3 Compliant

Current Reverse Leakage Vr

180μA @ 650V

ECCN Kodu

EAR99

Number Of Phases

1

Pin Sayısı

3

Terminal Kaplaması

Tin (Sn)

Average Rectified Current

10A

Operating Temperature Max

175°C

Applications

EFFICIENCY

Yüzey Montaj

NO

Seri

CoolSiC™+

Max Reverse Voltage Dc

650V

Speed

No Recovery Time > 500mA (Io)

Reverse Currentmax

220μA

HTS Kodu

8541.10.00.80

Capacitance Vr F

300pF @ 1V 1MHz

Kurşunsuz Kodu

yes

JESD-609 Kodu

e3

Voltage Forward Vf Max If

1.7V @ 10A

Reverse Recovery Time

0 s

Kılıf / Paket

TO-247-3

Montaj Tipi

Through Hole

Yayın Yılı

2013

Nem Hassasiyeti (MSL)

1 (Unlimited)

Diode Type

Silicon Carbide Schottky

Configuration

SINGLE

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Average Rectified Io

10A DC

Terminal Sayısı

3

Power Dissipation Max

150W

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Number Of Elements

1

Ambalaj

Tube

Parça Durumu

Active

Terminal Pozisyonu

SINGLE

Additional Feature

HIGH RELIABILITY

Case Connection

CATHODE

Fabrika Tedarik Süresi

18 Weeks

Forward Current

10A

Operating Temperature Junction

-55°C~175°C