IDP30E65D2XKSA1

Teknik Özellikler

Diode Element Material

SILICON

Kurşunsuz

Lead Free

Reverse Recovery Time

70 ns

Fabrika Tedarik Süresi

16 Weeks

Max Reverse Voltage Dc

650V

Montaj

Through Hole

Parça Durumu

Active

Pin Sayısı

2

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Additional Feature

PD-CASE

Terminal Kaplaması

Tin (Sn)

Voltage Forward Vf Max If

2.2V @ 30A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Forward Current

60A

HTS Kodu

8541.10.00.80

Ambalaj

Tube

Power Dissipation Max

143W

Nem Hassasiyeti (MSL)

1 (Unlimited)

JESD-609 Kodu

e3

Current Reverse Leakage Vr

40μA @ 650V

Peak Nonrepetitive Surge Current

180A

Average Rectified Current

60A

Montaj Tipi

Through Hole

Current Average Rectified Io

60A DC

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Case Connection

CATHODE

Max Repetitive Reverse Voltage Vrrm

650V

Halogen Free

Halogen Free

Terminal Sayısı

2

Applications

FAST SOFT RECOVERY

Element Configuration

Single

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-220-2

Number Of Phases

1

Number Of Elements

1

ECCN Kodu

EAR99

Maks. Çalışma Sıcaklığı

175°C

Diode Type

Standard

Operating Temperature Junction

-40°C~175°C

Yayın Yılı

2013