IDH08G65C6XKSA1

Teknik Özellikler

Reverse Recovery Time

0ns

Diode Type

Silicon Carbide Schottky

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Current Average Rectified Io

20A DC

Terminal Pozisyonu

SINGLE

Operating Temperature Junction

-55°C~175°C

Rep Pk Reverse Voltagemax

650V

Applications

EFFICIENCY

Jedec95 Code

TO-220AC

Voltage Forward Vf Max If

1.35V @ 8A

Additional Feature

PD-CASE

Reverse Currentmax

27μA

Ambalaj

Tube

Current Reverse Leakage Vr

27μA @ 420V

Number Of Phases

1

Operating Temperature Max

175°C

RoHS Durumu

ROHS3 Compliant

Montaj Tipi

Through Hole

Configuration

SINGLE

Terminal Sayısı

2

Parça Durumu

Active

ECCN Kodu

EAR99

Terminal Kaplaması

Tin (Sn)

Kılıf / Paket

TO-220-2

Power Dissipation Max

63W

JESD-609 Kodu

e3

Number Of Elements

1

Jesd30 Code

R-PSFM-T2

Case Connection

CATHODE

Yüzey Montaj

NO

Nonrep Pk Forward Currentmax

37A

Voltage Dc Reverse Vr Max

650V

Capacitance Vr F

401pF @ 1V 1MHz

Fabrika Tedarik Süresi

18 Weeks

Speed

No Recovery Time > 500mA (Io)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

Not Applicable

Yayın Yılı

2017