IDH04G65C5XKSA2

Teknik Özellikler

Operating Temperature Junction

-55°C~175°C

Forward Current

4A

Terminal Pozisyonu

SINGLE

Voltage Forward Vf Max If

1.7V @ 4A

Applications

EFFICIENCY

Diode Type

Silicon Carbide Schottky

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Reverse Recovery Time

0 s

Current Average Rectified Io

4A DC

Number Of Phases

1

Operating Temperature Max

175°C

Kurşunsuz Kodu

yes

Current Reverse Leakage Vr

70μA @ 650V

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

2

Ambalaj

Tube

Reverse Currentmax

70μA

Number Of Elements

1

JESD-609 Kodu

e3

Reach Svhc

No SVHC

Power Dissipation Max

48W

Kılıf / Paket

TO-220-2

Max Reverse Voltage Dc

650V

Seri

CoolSiC™+

Montaj Tipi

Through Hole

Configuration

SINGLE

Terminal Sayısı

2

Parça Durumu

Active

Kurşunsuz

Lead Free

Terminal Kaplaması

Tin (Sn)

ECCN Kodu

EAR99

HTS Kodu

8541.10.00.80

Average Rectified Current

4A

Output Currentmax

4A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2013

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yüzey Montaj

NO

Case Connection

CATHODE

Capacitance Vr F

130pF @ 1V 1MHz