IDB12E120ATMA1

Teknik Özellikler

Yayın Yılı

2005

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Voltage Dc Reverse Vr Max

1200V

Min. Çalışma Sıcaklığı

-55°C

Diode Element Material

SILICON

Jesd30 Code

R-PSSO-G2

Maks. Çalışma Sıcaklığı

150°C

Max Reverse Voltage Dc

1.2kV

Power Dissipation Max

96W

Number Of Elements

1

Element Configuration

Single

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

ECCN Kodu

EAR99

Terminal Formu

GULL WING

HTS Kodu

8541.10.00.80

Pin Sayısı

3

Halogen Free

Halogen Free

Average Rectified Current

28A

Montaj Tipi

Surface Mount

Kurşunsuz

Contains Lead

Parça Durumu

Obsolete

Terminal Sayısı

2

RoHS Durumu

RoHS Compliant

Peak Nonrepetitive Surge Current

63A

Number Of Phases

1

Kurşunsuz Kodu

no

Current Reverse Leakage Vr

100μA @ 1200V

Ambalaj

Tape & Reel (TR)

Qualification Status

Not Qualified

Voltage Forward Vf Max If

2.15V @ 12A

Operating Temperature Junction

-55°C~150°C

Current Average Rectified Io

28A DC

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Montaj

Surface Mount

Diode Type

Standard

Forward Voltage

2.15V

Reverse Recovery Time

150 ns