FF11MR12W1M1B11BOMA1

Teknik Özellikler

Continuous Drain Current Id

100A

Gate Charge Qg Max Vgs

250nC @ 15V

Ambalaj

Tray

ECCN Kodu

EAR99

Kılıf / Paket

Module

Nem Hassasiyeti (MSL)

Not Applicable

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

RoHS Durumu

ROHS3 Compliant

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Fabrika Tedarik Süresi

16 Weeks

Parça Durumu

Active

Yükseklik

12.35mm

Power Dissipation

20mW

Yayın Yılı

2008

Fet Type

2 N-Channel (Dual)

Manufacturer Package Identifier

AG-EASY1BM-2

Vgsth Max Id

5.55V @ 40mA

Number Of Channels

2

Seri

CoolSiC™+

Drain To Source Voltage Vdss

1200V 1.2kV

Montaj Tipi

Chassis Mount

Terminal Formu

UNSPECIFIED

Gate To Source Voltage Vgs

20V

Jesd30 Code

R-XUFM-X18

Yüzey Montaj

NO

Rds On Max Id Vgs

11m Ω @ 100A, 15V

Turn Off Delay Time

64.3 ns

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Sayısı

18

Terminal Pozisyonu

UPPER

Çalışma Sıcaklığı

-40°C~150°C TJ

Transistor Application

SWITCHING

Number Of Elements

2

Turn On Delay Time

25.1 ns

Fet Feature

Silicon Carbide (SiC)

Case Connection

ISOLATED

Input Capacitance Ciss Max Vds

7950pF @ 800V

Operating Mode

ENHANCEMENT MODE