DF11MR12W1M1B11BPSA1

Teknik Özellikler

Kılıf / Paket

Module

RoHS Durumu

ROHS3 Compliant

Seri

CoolSiC™+

Fet Feature

Silicon Carbide (SiC)

Nem Hassasiyeti (MSL)

Not Applicable

Fet Type

2 N-Channel (Dual)

Montaj Tipi

Chassis Mount

Gate Charge Qg Max Vgs

124nC @ 15V

Çalışma Sıcaklığı

-40°C~150°C TJ

Drain To Source Voltage Vdss

1200V

Fabrika Tedarik Süresi

16 Weeks

Power Max

20mW

Vgsth Max Id

5.55V @ 20mA

Current Continuous Drain Id25

50A Tj

Rds On Max Id Vgs

22.5m Ω @ 50A, 15V

Parça Durumu

Active

Input Capacitance Ciss Max Vds

3680pF @ 800V