DDB6U85N16LHOSA1

Teknik Özellikler

Voltage Dc Reverse Vr Max

1600V

Operating Temperature Junction

150°C Max

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Kurşunsuz

Lead Free

Halogen Free

Not Halogen Free

Speed

Standard Recovery >500ns, > 200mA (Io)

Current Average Rectified Io

60A

Voltage Forward Vf Max If

1.44V @ 100A

Forward Current

100A

Case Connection

ISOLATED

Ambalaj

Tray

RoHS Durumu

ROHS3 Compliant

Current Reverse Leakage Vr

5mA @ 1600V

Operating Temperature Max

150°C

Terminal Formu

UNSPECIFIED

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Output Currentmax

104A

Diode Element Material

SILICON

Yayın Yılı

1999

Jesd30 Code

R-XUFM-X6

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

Module

Rep Pk Reverse Voltagemax

1600V

Yüzey Montaj

NO

Montaj Tipi

Chassis Mount

Diode Configuration

3 Independent

Number Of Phases

3

Parça Durumu

Active

Terminal Pozisyonu

UPPER

Diode Type

Standard

Number Of Elements

6

Max Repetitive Reverse Voltage Vrrm

1.6kV

Terminal Sayısı

6