BSO615CGHUMA1

Teknik Özellikler

Radyasyon Dayanımı

No

Drain Currentmax Abs Id

3.1A

Pin Sayısı

8

Kurşunsuz Kodu

yes

Kurşunsuz

Lead Free

JESD-609 Kodu

e3

Fet Feature

Logic Level Gate

Gate To Source Voltage Vgs

20V

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Avalanche Energy Rating Eas

47 mJ

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Current Continuous Drain Id25

3.1A 2A

Çalışma Sıcaklığı

-55°C~150°C TJ

Montaj Tipi

Surface Mount

Operating Mode

ENHANCEMENT MODE

Additional Feature

AVALANCHE RATED

Ambalaj

Tape & Reel (TR)

Drainsource On Resistancemax

0.11Ohm

Pin Sayısı

8

Max Dual Supply Voltage

60V

Temel Parça No

BSO615

Transistor Element Material

SILICON

Power Dissipation

2W

Yayın Yılı

1999

Montaj

Surface Mount

Parça Durumu

Obsolete

Vgsth Max Id

2V @ 20μA

Fet Type

N and P-Channel

Rds On Max Id Vgs

110m Ω @ 3.1A, 10V

Nem Hassasiyeti (MSL)

3 (168 Hours)

Input Capacitance Ciss Max Vds

380pF @ 25V

Halogen Free

Not Halogen Free

Terminal Formu

GULL WING

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

26 Weeks

Gate Charge Qg Max Vgs

22.5nC @ 10V

Number Of Elements

2

Seri

SIPMOS®