BSO303PNTMA1

Teknik Özellikler

Rise Time

12.9ns

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Montaj Tipi

Surface Mount

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Kurşunsuz

Contains Lead

Pin Sayısı

8

Avalanche Energy Rating Eas

97 mJ

Number Of Elements

2

Drain To Source Voltage Vdss

30V

Operating Mode

ENHANCEMENT MODE

Terminal Sayısı

8

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fall Time Typ

39.3 ns

Transistor Element Material

SILICON

Seri

OptiMOS™

Vgsth Max Id

2V @ 100μA

Turn On Delay Time

10.6 ns

Transistor Application

SWITCHING

Parça Durumu

Obsolete

Rds On Max Id Vgs

21m Ω @ 8.2A, 10V

Fet Type

2 P-Channel (Dual)

Çalışma Sıcaklığı

-55°C~150°C TJ

Continuous Drain Current Id

8.2A

Gate Charge Qg Max Vgs

72.5nC @ 10V

RoHS Durumu

Non-RoHS Compliant

Ambalaj

Tape & Reel (TR)

Montaj

Surface Mount

Input Capacitance Ciss Max Vds

1761pF @ 25V

Gate To Source Voltage Vgs

20V

Fet Feature

Logic Level Gate

ECCN Kodu

EAR99

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Max Power Dissipation

2W

Power Dissipation

2W

Radyasyon Dayanımı

No

Yayın Yılı

2008

Ds Breakdown Voltagemin

30V

Turn Off Delay Time

55.4 ns

Terminal Formu

GULL WING