BSO207PNTMA1

Teknik Özellikler

Transistor Application

SWITCHING

Vgsth Max Id

1.2V @ 40μA

Rds On Max Id Vgs

45m Ω @ 5.7A, 4.5V

Parça Durumu

Obsolete

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Sayısı

8

Seri

OptiMOS™

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

Number Of Elements

2

Drain To Source Voltage Vdss

20V

Avalanche Energy Rating Eas

44 mJ

Pin Sayısı

8

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Additional Feature

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Ds Breakdown Voltagemin

20V

Yayın Yılı

2001

Terminal Formu

GULL WING

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

ECCN Kodu

EAR99

Fet Feature

Logic Level Gate

Max Power Dissipation

2W

Temel Parça No

BSO207

RoHS Durumu

Non-RoHS Compliant

Input Capacitance Ciss Max Vds

1013pF @ 15V

Montaj

Surface Mount

Ambalaj

Tape & Reel (TR)

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Max

2W

Fet Type

2 P-Channel (Dual)

Drainsource On Resistancemax

0.045Ohm

Gate Charge Qg Max Vgs

23.4nC @ 4.5V

Continuous Drain Current Id

5.7A