BSO203PNTMA1

Teknik Özellikler

Avalanche Energy Rating Eas

97 mJ

Pin Sayısı

8

Operating Mode

ENHANCEMENT MODE

Drain To Source Voltage Vdss

20V

Number Of Elements

2

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Montaj Tipi

Surface Mount

Additional Feature

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Vgsth Max Id

1.2V @ 100μA

Transistor Application

SWITCHING

Parça Durumu

Obsolete

Rds On Max Id Vgs

21m Ω @ 8.2A, 4.5V

Terminal Sayısı

8

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

OptiMOS™

Transistor Element Material

SILICON

RoHS Durumu

Non-RoHS Compliant

Ambalaj

Tape & Reel (TR)

Input Capacitance Ciss Max Vds

2242pF @ 15V

Montaj

Surface Mount

Power Max

2W

Fet Type

2 P-Channel (Dual)

Drainsource On Resistancemax

0.021Ohm

Çalışma Sıcaklığı

-55°C~150°C TJ

Continuous Drain Current Id

8.2A

Gate Charge Qg Max Vgs

48.6nC @ 4.5V

Yayın Yılı

2002

Ds Breakdown Voltagemin

20V

Terminal Formu

GULL WING

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Fet Feature

Logic Level Gate

ECCN Kodu

EAR99

Max Power Dissipation

2W