BSO200N03

Teknik Özellikler

Pin Sayısı

8

Kurşunsuz

Lead Free

Contact Plating

Tin

Tepe Reflow Süresi (maks. sn)

40

Number Of Elements

2

Operating Mode

ENHANCEMENT MODE

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Rise Time

2.6ns

Pin Sayısı

8

Drain To Source Breakdown Voltage

30V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Additional Feature

AVALANCHE RATED

Montaj Tipi

Surface Mount

Vgsth Max Id

2V @ 13μA

Turn On Delay Time

2.9 ns

Transistor Application

SWITCHING

Parça Durumu

Obsolete

Akım Değeri

6.6A

Rds On Max Id Vgs

20m Ω @ 7.9A, 10V

Terminal Sayısı

8

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fall Time Typ

2.6 ns

Qualification Status

Not Qualified

Transistor Element Material

SILICON

Seri

OptiMOS™

RoHS Durumu

RoHS Compliant

Ambalaj

Tape & Reel (TR)

Input Capacitance Ciss Max Vds

1010pF @ 15V

Montaj

Surface Mount

Drainsource On Resistancemax

0.02Ohm

Fet Type

2 N-Channel (Dual)

Voltage Rated Dc

30V

Çalışma Sıcaklığı

-55°C~150°C TJ

Tepe Reflow Sıcaklığı (°C)

260

Jedec95 Code

MS-012

Continuous Drain Current Id

7A

JESD-609 Kodu

e3

Gate Charge Qg Max Vgs

8nC @ 5V

Yayın Yılı

2011

Feedback Capmax Crss

56 pF