BSL214NH6327XTSA1

Teknik Özellikler

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~150°C TJ

Drainsource On Resistancemax

0.14Ohm

Kurşunsuz Kodu

yes

Feedback Capmax Crss

9 pF

Ambalaj

Tape & Reel (TR)

Gate To Source Voltage Vgs

12V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Pin Sayısı

6

Additional Feature

AVALANCHE RATED

Fet Feature

Logic Level Gate, 2.5V Drive

Max Power Dissipation

500mW

Transistor Element Material

SILICON

Fet Type

2 N-Channel (Dual)

Vgsth Max Id

1.2V @ 3.7μA

Montaj

Surface Mount

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2013

Rds On Max Id Vgs

140m Ω @ 1.5A, 4.5V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

1.5A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Max Dual Supply Voltage

20V

Input Capacitance Ciss Max Vds

143pF @ 10V

Fabrika Tedarik Süresi

12 Weeks

JESD-609 Kodu

e3

Number Of Elements

2

Kılıf / Paket

SOT-23-6 Thin, TSOT-23-6

Terminal Kaplaması

Tin (Sn)

Terminal Formu

GULL WING

Gate Charge Qg Max Vgs

0.8nC @ 5V

Halogen Free

Halogen Free

Power Max

500mW

Seri

Automotive, AEC-Q101, OptiMOS™

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Rise Time

7.6ns

Montaj Tipi

Surface Mount

Kurşunsuz

Lead Free

Parça Durumu

Obsolete