BSD223PH6327XTSA1

Teknik Özellikler

Rds On Max Id Vgs

1.2 Ω @ 390mA, 4.5V

Terminal Formu

GULL WING

Uzunluk

2mm

Fet Type

2 P-Channel (Dual)

Transistor Element Material

SILICON

Gate To Source Voltage Vgs

12V

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Max Dual Supply Voltage

-20V

Fet Feature

Logic Level Gate

Reference Standard

AEC-Q101

Vgsth Max Id

1.2V @ 1.5μA

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Kurşunsuz

Contains Lead

Kurşunsuz Kodu

yes

Seri

OptiMOS™

Montaj

Surface Mount

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Turn Off Delay Time

5.1 ns

Temel Parça No

BSD223

Parça Durumu

Active

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Fabrika Tedarik Süresi

10 Weeks

Gate Charge Qg Max Vgs

0.62nC @ 4.5V

Drain Currentmax Abs Id

0.39A

Additional Feature

AVALANCHE RATED

Turn On Delay Time

3.8 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

390mA

Rise Time

5ns

Halogen Free

Halogen Free

Montaj Tipi

Surface Mount

Akım Değeri

-350mA

Max Power Dissipation

250mW

Drain To Source Voltage Vdss

20V

Ambalaj

Tape & Reel (TR)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Feedback Capmax Crss

22 pF

Genişlik

1.25mm

Yükseklik

800μm