BSC750N10NDGATMA1

Teknik Özellikler

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

13A

Jesd30 Code

R-PDSO-F6

Rise Time

4ns

Montaj Tipi

Surface Mount

Halogen Free

Halogen Free

Ambalaj

Tape & Reel (TR)

Yükseklik

1mm

Pin Sayısı

8

Transistor Application

SWITCHING

Drainsource On Resistancemax

0.075Ohm

Yayın Yılı

2011

Threshold Voltage

3V

Operating Mode

ENHANCEMENT MODE

Kılıf / Paket

8-PowerVDFN

Çalışma Sıcaklığı

-55°C~150°C TJ

Pin Sayısı

8

Input Capacitance Ciss Max Vds

720pF @ 50V

Number Of Elements

2

Terminal Sayısı

6

Contact Plating

Tin

Current Continuous Drain Id25

3.2A

Radyasyon Dayanımı

No

Rds On Max Id Vgs

75m Ω @ 13A, 10V

Power Dissipation

26W

Transistor Element Material

SILICON

Fet Type

2 N-Channel (Dual)

Terminal Formu

FLAT

Drain To Source Breakdown Voltage

100V

Vgsth Max Id

4V @ 12μA

Avalanche Energy Rating Eas

17 mJ

Fet Feature

Standard

Gate To Source Voltage Vgs

20V

Max Dual Supply Voltage

100V

Kurşunsuz

Contains Lead

Seri

OptiMOS™

Kurşunsuz Kodu

no

Turn Off Delay Time

13 ns

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant