BSC150N03LDGATMA1

Teknik Özellikler

Case Connection

DRAIN

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Parça Durumu

Active

Temel Parça No

BSC150N03

Terminal Sayısı

6

Fabrika Tedarik Süresi

26 Weeks

JESD-609 Kodu

e3

Gate Charge Qg Max Vgs

13.2nC @ 10V

Qualification Status

Not Qualified

Contact Plating

Tin

Additional Feature

LOGIC LEVEL COMPATIBLE

Operating Mode

ENHANCEMENT MODE

Kurşunsuz Kodu

no

Yayın Yılı

2009

Seri

OptiMOS™

Input Capacitance Ciss Max Vds

1100pF @ 15V

Montaj

Surface Mount

Number Of Elements

2

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

8

Çalışma Sıcaklığı

-55°C~150°C TJ

Kılıf / Paket

8-PowerVDFN

Max Dual Supply Voltage

30V

Gate To Source Voltage Vgs

20V

Fet Feature

Logic Level Gate

Avalanche Energy Rating Eas

10 mJ

Vgsth Max Id

2.2V @ 250μA

Ambalaj

Tape & Reel (TR)

Transistor Application

SWITCHING

Kurşunsuz

Contains Lead

Pin Sayısı

8

Power Dissipation

26W

REACH Uyumluluk Kodu

not_compliant

Rds On Max Id Vgs

15m Ω @ 20A, 10V

Jesd30 Code

R-PDSO-F6

Continuous Drain Current Id

8A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Formu

FLAT

Montaj Tipi

Surface Mount