BSC0925NDATMA1

Teknik Özellikler

Drain To Source Voltage Vdss

30V

Ambalaj

Tape & Reel (TR)

Transistor Application

SWITCHING

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Pin Sayısı

8

REACH Uyumluluk Kodu

not_compliant

Continuous Drain Current Id

15A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Jesd30 Code

R-PDSO-F6

Halogen Free

Halogen Free

Montaj Tipi

Surface Mount

Rise Time

3.8ns

Max Power Dissipation

2.5W

Terminal Sayısı

6

Contact Plating

Tin

Operating Mode

ENHANCEMENT MODE

Ds Breakdown Voltagemin

30V

Yayın Yılı

2013

Drainsource On Resistancemax

0.007Ohm

Number Of Elements

2

Input Capacitance Ciss Max Vds

1157pF @ 15V

Pin Sayısı

8

Çalışma Sıcaklığı

-55°C~150°C TJ

Kılıf / Paket

8-PowerTDFN

Gate To Source Voltage Vgs

20V

Vgsth Max Id

2V @ 250μA

Avalanche Energy Rating Eas

14 mJ

Fet Feature

Standard

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Power Dissipation

2.5W

Rds On Max Id Vgs

5m Ω @ 20A, 10V

Terminal Formu

FLAT

Transistor Element Material

SILICON

Fet Type

2 N Channel (Dual Buck Chopper)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Case Connection

DRAIN SOURCE

Parça Durumu

Active

Fabrika Tedarik Süresi

18 Weeks

Drain Currentmax Abs Id

11A

Gate Charge Qg Max Vgs

17nC @ 10V