BSC0924NDIATMA1

Teknik Özellikler

Fet Feature

Logic Level Gate, 4.5V Drive

Vgsth Max Id

2V @ 250μA

Ambalaj

Tape & Reel (TR)

Configuration

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

Gate To Source Voltage Vgs

20V

Drain To Source Voltage Vdss

30V

Pin Sayısı

8

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Jesd30 Code

R-PDSO-N6

Rds On Max Id Vgs

5m Ω @ 20A, 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

32A

REACH Uyumluluk Kodu

not_compliant

Fet Type

2 N-Channel (Dual) Asymmetrical

Max Power Dissipation

1W

Transistor Element Material

SILICON

Terminal Formu

NO LEAD

Montaj Tipi

Surface Mount

Terminal Sayısı

6

Fabrika Tedarik Süresi

18 Weeks

Case Connection

DRAIN SOURCE

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Parça Durumu

Active

Current Continuous Drain Id25

17A 32A

Contact Plating

Tin

Drain Currentmax Abs Id

1.3A

JESD-609 Kodu

e3

Gate Charge Qg Max Vgs

10nC @ 4.5V

Drainsource On Resistancemax

0.007Ohm

Seri

OptiMOS™

Ds Breakdown Voltagemin

30V

Operating Mode

ENHANCEMENT MODE

Kurşunsuz Kodu

no

Yayın Yılı

2013

Çalışma Sıcaklığı

-55°C~150°C TJ

Kılıf / Paket

8-PowerTDFN

Input Capacitance Ciss Max Vds

1160pF @ 15V

Number Of Elements

2

Montaj

Surface Mount