BSC072N03LDGATMA1

Teknik Özellikler

Kılıf / Paket

8-PowerVDFN

Çalışma Sıcaklığı

-55°C~150°C TJ

Pin Sayısı

8

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Number Of Elements

2

Input Capacitance Ciss Max Vds

3500pF @ 15V

Pulsed Drain Currentmax Idm

80A

Drainsource On Resistancemax

0.0094Ohm

Seri

OptiMOS™

Yayın Yılı

2009

Operating Mode

ENHANCEMENT MODE

Kurşunsuz Kodu

no

Ds Breakdown Voltagemin

30V

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Qualification Status

Not Qualified

Current Continuous Drain Id25

11.5A

Gate Charge Qg Max Vgs

41nC @ 10V

Drain Currentmax Abs Id

11.5A

Fabrika Tedarik Süresi

16 Weeks

Terminal Sayısı

6

Temel Parça No

BSC072N03

Parça Durumu

Obsolete

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Case Connection

DRAIN

Transistor Element Material

SILICON

Fet Type

2 N-Channel (Dual)

Montaj Tipi

Surface Mount

Terminal Formu

FLAT

Nem Hassasiyeti (MSL)

1 (Unlimited)

Jesd30 Code

R-PDSO-F6

Rds On Max Id Vgs

7.2m Ω @ 20A, 10V

Yüzey Montaj

YES

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Application

SWITCHING

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ambalaj

Tape & Reel (TR)

Vgsth Max Id

2.2V @ 250μA

Avalanche Energy Rating Eas

90 mJ

Fet Feature

Logic Level Gate