BFN18H6327XTSA1

Teknik Özellikler

Transistor Element Material

SILICON

Terminal Formu

FLAT

Collectoremitter Saturation Voltage

500mV

Nem Hassasiyeti (MSL)

1 (Unlimited)

Frekans

70MHz

Max Power Dissipation

1W

Pin Sayısı

3

Uzunluk

4.5mm

Seri

Automotive, AEC-Q101

Max Breakdown Voltage

300V

Case Connection

COLLECTOR

Transition Frequency

70MHz

Collectoremitter Breakdown Voltage

300V

Emitter Base Voltage Vebo

5V

Hfemin

30

Collector Base Voltage Vcbo

300V

Montaj

Surface Mount

Collector Emitter Voltage Vceo

300V

Contact Plating

Tin

Yükseklik

1.5mm

Transistor Type

NPN

Parça Durumu

Last Time Buy

Ambalaj

Tape & Reel (TR)

Montaj Tipi

Surface Mount

Radyasyon Dayanımı

No

Power Dissipation

1.5W

RoHS Durumu

ROHS3 Compliant

Vce Saturation Max Ib Ic

500mV @ 2mA, 20mA

Max Collector Current

200mA

Dc Current Gain Hfe Min Ic Vce

30 @ 30mA 10V

Fabrika Tedarik Süresi

4 Weeks

Yayın Yılı

2005

Transistor Application

SWITCHING

Number Of Elements

1

Element Configuration

Single

Çalışma Sıcaklığı

150°C TJ

Polaritychannel Type

NPN

Kılıf / Paket

TO-243AA

Genişlik

2.5mm

Current Collector Cutoff Max

100nA ICBO