BCR583E6327HTSA1

Teknik Özellikler

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Montaj Tipi

Surface Mount

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Not For New Designs

Resistor Base R1

10 k Ω

Fabrika Tedarik Süresi

26 Weeks

Qualification Status

Not Qualified

Terminal Sayısı

3

Resistor Emitter Base R2

10 k Ω

Ambalaj

Tape & Reel (TR)

JESD-609 Kodu

e3

Kurşunsuz Kodu

yes

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Number Of Elements

1

Terminal Kaplaması

Tin (Sn)

Transistor Type

PNP - Pre-Biased

Additional Feature

BUILT-IN BIAS RESISTOR RATIO IS 1

Yayın Yılı

2011

Power Max

330mW

Yüzey Montaj

YES

Terminal Formu

GULL WING

Jesd30 Code

R-PDSO-G3

Voltage Collector Emitter Breakdown Max

50V

Currentcollector Ic Max

500mA

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON

Transistor Application

SWITCHING

Vce Saturation Max Ib Ic

300mV @ 2.5mA, 50mA

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Collector Cutoff Max

100nA ICBO

Temel Parça No

BCR583

Polaritychannel Type

PNP

Frequency Transition

150MHz

Configuration

SINGLE WITH BUILT-IN RESISTOR

Dc Current Gain Hfe Min Ic Vce

70 @ 50mA 5V

Transition Frequency

150MHz

Terminal Pozisyonu

DUAL