BCM856SH6433XTMA1

Teknik Özellikler

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Collector Emitter Voltage Vceo

650mV

Fabrika Tedarik Süresi

26 Weeks

Montaj

Surface Mount

Vce Saturation Max Ib Ic

650mV @ 5mA, 100mA

Collector Base Voltage Vcbo

80V

Yayın Yılı

2011

Polaritychannel Type

PNP

Terminal Formu

GULL WING

Current Collector Cutoff Max

15nA ICBO

Dc Current Gain Hfe Min Ic Vce

200 @ 2mA 5V

Configuration

SEPARATE, 2 ELEMENTS

Jesd30 Code

R-PDSO-G6

Parça Durumu

Last Time Buy

Number Of Elements

2

Transistor Application

AMPLIFIER

Frequency Transition

250MHz

Power Max

250mW

Ambalaj

Tape & Reel (TR)

Çalışma Sıcaklığı

150°C TJ

Kurşunsuz Kodu

yes

Max Power Dissipation

250mW

Terminal Sayısı

6

Kılıf / Paket

6-VSSOP, SC-88, SOT-363

Temel Parça No

BCM856S

Transistor Type

2 PNP (Dual)

Collectoremitter Breakdown Voltage

65V

Transition Frequency

250MHz

Max Collector Current

100mA

Montaj Tipi

Surface Mount