BC847SE6327BTSA1

Teknik Özellikler

Collector Emitter Voltage Vceo

600mV

Parça Durumu

Obsolete

Ambalaj

Tape & Reel (TR)

Number Of Elements

2

Transistor Type

2 NPN (Dual)

Dc Current Gain Hfe Min Ic Vce

200 @ 2mA 5V

Montaj

Surface Mount

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

150°C TJ

Max Breakdown Voltage

45V

Transition Frequency

250MHz

Polaritychannel Type

NPN

RoHS Durumu

RoHS Compliant

Pin Sayısı

6

Yayın Yılı

2011

Terminal Sayısı

6

Kılıf / Paket

6-VSSOP, SC-88, SOT-363

Terminal Formu

GULL WING

Transistor Element Material

SILICON

Temel Parça No

BC847S

Vce Saturation Max Ib Ic

600mV @ 5mA, 100mA

Max Collector Current

100mA

Current Collector Cutoff Max

15nA ICBO

Transistor Application

SWITCHING

Power Max

250mW

Configuration

SEPARATE, 2 ELEMENTS

Nem Hassasiyeti (MSL)

1 (Unlimited)

Collector Base Voltage Vcbo

50V

Frequency Transition

250MHz

Collectoremitter Breakdown Voltage

45V

Max Power Dissipation

250mW

Contact Plating

Tin