BC847CWH6778XTSA1

Teknik Özellikler

Vce Saturation Max Ib Ic

600mV @ 5mA, 100mA

Montaj

Surface Mount

Contact Plating

Tin

Nem Hassasiyeti (MSL)

1 (Unlimited)

Collector Emitter Voltage Vceo

600mV

Fabrika Tedarik Süresi

52 Weeks

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON

Configuration

SINGLE

Jesd30 Code

R-PDSO-G3

Dc Current Gain Hfe Min Ic Vce

420 @ 2mA 5V

Collector Base Voltage Vcbo

50V

Yayın Yılı

2008

Polaritychannel Type

NPN

Additional Feature

LOW NOISE

Terminal Pozisyonu

DUAL

Terminal Formu

GULL WING

Current Collector Cutoff Max

15nA ICBO

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Frequency Transition

250MHz

Power Max

250mW

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Transistor Application

AMPLIFIER

Parça Durumu

Not For New Designs

Transition Frequency

250MHz

Collectoremitter Breakdown Voltage

45V

Max Collector Current

100mA

Montaj Tipi

Surface Mount

Temel Parça No

BC847

Transistor Type

NPN

Terminal Sayısı

3

Kılıf / Paket

SC-70, SOT-323

Çalışma Sıcaklığı

150°C TJ

Kurşunsuz Kodu

yes

Max Power Dissipation

250mW