AUIRFN8459TR

Teknik Özellikler

Parça Durumu

Active

Turn On Delay Time

10 ns

Number Of Elements

2

Pin Sayısı

8

Transistor Application

SWITCHING

Ambalaj

Tape & Reel (TR)

Rise Time

55ns

Reference Standard

AEC-Q101

Element Configuration

Dual

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Çalışma Sıcaklığı

-55°C~175°C TJ

Avalanche Energy Rating Eas

66 mJ

Max Power Dissipation

50W

Rds On Max Id Vgs

5.9m Ω @ 40A, 10V

Terminal Sayısı

6

Fall Time Typ

42 ns

Kılıf / Paket

8-PowerTDFN

Continuous Drain Current Id

50A

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Montaj Tipi

Surface Mount

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

2250pF @ 25V

RoHS Durumu

ROHS3 Compliant

Case Connection

DRAIN

Fet Feature

Standard

Fabrika Tedarik Süresi

11 Weeks

Gate Charge Qg Max Vgs

60nC @ 10V

Vgsth Max Id

3.9V @ 50μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj

Surface Mount

Number Of Channels

2

Yayın Yılı

2014

Drain To Source Voltage Vdss

40V

Terminal Formu

FLAT

Additional Feature

ULTRA LOW RESISTANCE

Fet Type

2 N-Channel (Dual)

Seri

HEXFET®

Gate To Source Voltage Vgs

20V