AUIRF7379QTR

Teknik Özellikler

Pulsed Drain Currentmax Idm

46A

Terminal Sayısı

8

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Çalışma Sıcaklığı

-55°C~150°C TJ

Rds On Max Id Vgs

45m Ω @ 5.8A, 10V

Max Power Dissipation

2.5W

Radyasyon Dayanımı

No

Threshold Voltage

1V

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Montaj Tipi

Surface Mount

Continuous Drain Current Id

4.3A

Number Of Elements

2

Pin Sayısı

8

JESD-609 Kodu

e3

Transistor Application

SWITCHING

Drain To Source Breakdown Voltage

30V

Parça Durumu

Active

Current Continuous Drain Id25

5.8A 4.3A

Ambalaj

Tape & Reel (TR)

Element Configuration

Dual

Seri

HEXFET®

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Gate To Source Voltage Vgs

20V

Uzunluk

5mm

Yayın Yılı

2011

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Terminal Formu

GULL WING

Drainsource On Resistancemax

0.045Ohm

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Yükseklik

1.5mm

Fet Type

N and P-Channel

Terminal Kaplaması

Matte Tin (Sn)

RoHS Durumu

ROHS3 Compliant

Fet Feature

Logic Level Gate

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

520pF @ 25V

Power Dissipation

2.5W

Montaj

Surface Mount

Nominal Vgs

1 V