AUIRF7343QTR

Teknik Özellikler

Nominal Vgs

1 V

Reach Svhc

No SVHC

Montaj

Surface Mount

Genişlik

4mm

Fabrika Tedarik Süresi

26 Weeks

Gate Charge Qg Max Vgs

36nC @ 10V

Vgsth Max Id

1V @ 250μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Feature

Logic Level Gate

RoHS Durumu

ROHS3 Compliant

Input Capacitance Ciss Max Vds

740pF @ 25V

Power Dissipation

2W

Transistor Element Material

SILICON

Terminal Kaplaması

Matte Tin (Sn)

Kurşunsuz

Lead Free

Gate To Source Voltage Vgs

20V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Drain Currentmax Abs Id

4.7A

Seri

HEXFET®

Drainsource On Resistancemax

0.05Ohm

Terminal Formu

GULL WING

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Fet Type

N and P-Channel

Yükseklik

1.5mm

Uzunluk

5mm

Yayın Yılı

2011

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Current Continuous Drain Id25

4.7A 3.4A

Ambalaj

Tape & Reel (TR)

Element Configuration

Dual

JESD-609 Kodu

e3

Transistor Application

SWITCHING

Number Of Elements

2

Pin Sayısı

8

Parça Durumu

Not For New Designs

Drain To Source Breakdown Voltage

55V

Montaj Tipi

Surface Mount

Radyasyon Dayanımı

No

Threshold Voltage

1V

Operating Mode

ENHANCEMENT MODE